Hindering the Oxidation of Silicene with Non-Reactive Encapsulation (Articolo in rivista)

Type
Label
  • Hindering the Oxidation of Silicene with Non-Reactive Encapsulation (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/adfm.201300354 (literal)
Alternative label
  • Alessandro Molle , Carlo Grazianetti , Daniele Chiappe , Eugenio Cinquanta , Elena Cianci , Grazia Tallarida , and Marco Fanciulli (2013)
    Hindering the Oxidation of Silicene with Non-Reactive Encapsulation
    in Advanced functional materials (Print); Wiley-VCH Verlag Gmbh, Weinheim (Germania)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alessandro Molle , Carlo Grazianetti , Daniele Chiappe , Eugenio Cinquanta , Elena Cianci , Grazia Tallarida , and Marco Fanciulli (literal)
Pagina inizio
  • 4340 (literal)
Pagina fine
  • 4344 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 23 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza (MB), Italy; Dipartimento di Scienza dei Materiali, Universit√† degli Studi di Milano Bicocca, via R. Cozzi 53, I-20126, Milano (MI), Italy (literal)
Titolo
  • Hindering the Oxidation of Silicene with Non-Reactive Encapsulation (literal)
Abstract
  • The chemical stability of buckled silicene, i.e., the silicon counterpart of graphene, is investigated then resulting in a low reactivity with O 2 when dosing up to 1000 L and in a progressive oxidation under ambient conditions. The latter drawback is addressed by engineering ad hoc Al- and Al 2 O 3 -based encapsulations of the silicene layer. This encapsulation design can be generally applied to any silicene confi guration, irrespective of the support substrate, and it leads to the fabrication of atomically sharp and chemically intact Al/silicene and Al 2 O 3 /silicene interfaces that can be functionally used for ex situ characterization as well as for gated device fabrication. (literal)
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