High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1557/jmr.2012.211 (literal)

Alternative label

• Cutroneo M, Musumeci P, Zimbone M, Torrisi L, La Via F, Margarone D, Velyhan A, Ullschmied J, Calcagno L (2013)
  High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas
  in Journal of materials research
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Cutroneo M, Musumeci P, Zimbone M, Torrisi L, La Via F, Margarone D, Velyhan A, Ullschmied J, Calcagno L (literal)

Pagina inizio

• 87 (literal)

Pagina fine

• 93 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 28 (literal)

Rivista

• Journal of materials research (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Dept Phys, I-98166 S Agata, ME, Italy [ 2 ] Univ Catania, Dipartimento Fis, I-95123 Catania, Italy [ 3 ] Ist Microelettron Microsistemi CNR, Catania, Italy [ 4 ] ASCR, Inst Phys, ELI Beamlines Project, Prague 18221, Czech Republic [ 5 ] AS CR, Inst Plasma Phys, Vvi, Prague 8, Czech Republic (literal)

Titolo

• High performance SiC detectors for MeV ion beams generated by intense pulsed laser plasmas (literal)

Abstract

• Silicon carbide (SiC) detectors were used to analyze the multi-MeV ions of the plasma produced by irradiation of various targets with a 300-ps laser at intensity of 10(16) W/cm(2). The SiC detectors were realized by fabricating Schottky diodes on 80 mu m epitaxial layer. The low dopant concentration and defect density of the epilayer allowed the realization of good performance detectors. The use of SiC detectors ensures the cutting of the visible and soft ultraviolet radiation emitted from plasma enhancing the sensitivity to very fast ions. The time-of-flight spectra obtained by irradiating different targets show a peak associated to protons and various peaks relative to different charge states of ions. Processing of the experimental data allows to estimate the energies of the protons and of the different ions emitted from laser-induced plasma. The SiC detector results are compared with the ones obtained by Ion Collector and a Thomson Parabola spectrometer. (literal)

Prodotto di

• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO LA VIA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Autore CNR di

• FRANCESCO LA VIA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of materials research (Rivista)