3C-SiC growth on (001) Si substrates by using a multilayer buffer (Articolo in rivista)

Type
Label
  • 3C-SiC growth on (001) Si substrates by using a multilayer buffer (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.740-742.263 (literal)
Alternative label
  • Canino A, Severino A, Piluso N, La Via F, Privitera S Alberti A (2013)
    3C-SiC growth on (001) Si substrates by using a multilayer buffer
    in Materials science forum
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Canino A, Severino A, Piluso N, La Via F, Privitera S Alberti A (literal)
Pagina inizio
  • 263 (literal)
Pagina fine
  • 266 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 740-742 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania (literal)
Titolo
  • 3C-SiC growth on (001) Si substrates by using a multilayer buffer (literal)
Abstract
  • 3C-SiC shows encouraging physical properties for the development of low cost high power compatible silicon based technology. The fundamental capability of grown 3C-SiC on silicon substrates leads to the possibility of a full integration of Si based process technologies. This is the driving force for the efforts for development a high quality heteroepitaxial film. The fundamental issue is the reduction of defects and stress due to the lattice mismatch between the 3C-SiC epilayer and the Silicon substrate. In this paper we show a way to reduce macroscopic structural features and to enhance the material quality and the surface quality by simply using a process based on a multilayer (ML) buffer structure with n(++) and n doping alternation. This process leads to an evident improvement of both surface roughness, morphology and crystal quality. (literal)
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