Anomalous Impurity Segregation and Local Bonding Fluctuation in l-S (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Anomalous Impurity Segregation and Local Bonding Fluctuation in l-S (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevLett.110.117801 (literal)

Alternative label

• Fisicaro G, Huet K, Negru R, Hackenberg M, Pichler P, Taleb N, La Magna A (2013)
  Anomalous Impurity Segregation and Local Bonding Fluctuation in l-S
  in Physical review letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fisicaro G, Huet K, Negru R, Hackenberg M, Pichler P, Taleb N, La Magna A (literal)

Pagina inizio

• 117801 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 110 (literal)

Rivista

• Physical review letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 11 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR IMM, I-95121 Catania, Italy [ 2 ] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany [ 3 ] Univ Erlangen Nurnberg, Chair Elect Devices, D-91058 Erlangen, Germany [ 4 ] Probion, F-92220 Bagneux, France (literal)

Titolo

• Anomalous Impurity Segregation and Local Bonding Fluctuation in l-S (literal)

Abstract

• Anomalous impurity redistribution after a laser irradiation process in group-IV elements has been reported in numerous papers. In this Letter, we correlate this still unexplained behavior with the peculiar bonding character of the liquid state of group-IV semiconductors. Analyzing the B-Si system in a wide range of experimental conditions we demonstrate that this phenomenon derives from the non-Fickian diffusion transport of B in l-Si. The proposed diffusion model relies on the balance between two impurity states in different bonding configurations: one migrating at higher diffusivity than the other. This microscopic mechanism explains the anomalous B segregation, whereas accurate comparisons between experimental chemical profiles and simulation results validate the model. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Autore CNR

• ANTONINO LA MAGNA (Unità di personale interno)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Unità di personale interno)
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22742

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review letters (Rivista)