B-doping in Ge by excimer laser annealing (Articolo in rivista)

Type
Label
  • B-doping in Ge by excimer laser annealing (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4795268 (literal)
Alternative label
  • Impellizzeri G, Napolitani E, Boninelli S, Fisicaro G, Cuscunà M, Milazzo R, La Magna A, Fortunato G, Priolo F, Privitera V (2013)
    B-doping in Ge by excimer laser annealing
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Impellizzeri G, Napolitani E, Boninelli S, Fisicaro G, Cuscunà M, Milazzo R, La Magna A, Fortunato G, Priolo F, Privitera V (literal)
Pagina inizio
  • 113505 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 113 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy [ 2 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy [ 3 ] Univ Padua, CNR IMM MATIS, I-35131 Padua, Italy [ 4 ] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy [ 5 ] CNR IMM, I-95121 Catania, Italy [ 6 ] CNR IMM, I-00133 Rome, Italy (literal)
Titolo
  • B-doping in Ge by excimer laser annealing (literal)
Abstract
  • An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribution and electrical activation in Ge is reported. We performed detailed structural, chemical, and electrical characterizations of Ge samples implanted with B (20 keV, 1 x 10 15, or 1 x 10(16) B/cm(2)) and processed by ELA (lambda = 308 nm) with multiple pulses (1, 3, or 10). We also developed a diffusion model, in order to simulate the B redistribution induced by the ELA process. We found an anomalous impurity redistribution in the molten phase, which causes a dopant incorporation during the melt-growth at the maximum melt depth. The investigated samples showed a partial electrical activation of the B dopant. The inactivation of B in the samples implanted with 1 x 10(15) B/cm(2) was correlated to an oxygen contamination, while the poor electrical activation of B in the samples implanted with 1 x 10(16) B/cm(2) was related to the precipitation of the dopant, in good agreement with the experimental and theoretical results. (literal)
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