Microscopy study of the conductive filament in HfO2 resistive switching memory devices (Articolo in rivista)

Type
Label
  • Microscopy study of the conductive filament in HfO2 resistive switching memory devices (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mee.2013.03.145 (literal)
Alternative label
  • Privitera S, Bersuker G, Butcher B, Kalantarian A, Lombardo S, Bongiorno C, Geer R, Gilmer DC, Kirsch PD (2013)
    Microscopy study of the conductive filament in HfO2 resistive switching memory devices
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Privitera S, Bersuker G, Butcher B, Kalantarian A, Lombardo S, Bongiorno C, Geer R, Gilmer DC, Kirsch PD (literal)
Pagina inizio
  • 75 (literal)
Pagina fine
  • 78 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 109 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Natl Res Council CNR, IMM, I-95121 Catania, Italy [ 2 ] SEMATECH, Albany, NY USA [ 3 ] CNSE, Albany, NY USA [ 4 ] Stanford Univ, Stanford, CA 94305 USA (literal)
Titolo
  • Microscopy study of the conductive filament in HfO2 resistive switching memory devices (literal)
Abstract
  • A detailed physical analysis of the conductive filament electrically formed in HfO2-based resistive switching memory devices with both Hf and Ti metal oxygen exchange layers is presented. The filament, observed by applying transmission electron microscopy (TEM), scanning TEM (STEM), and electron energy loss spectroscopy (EELS) techniques to 50 x 50 nm(2) cells, is a cone-shaped metal-rich region in the HfO2 dielectric of the resistive switching device. (literal)
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