http://www.cnr.it/ontology/cnr/individuo/prodotto/ID272237
Microscopy study of the conductive filament in HfO2 resistive switching memory devices (Articolo in rivista)
- Type
- Label
- Microscopy study of the conductive filament in HfO2 resistive switching memory devices (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mee.2013.03.145 (literal)
- Alternative label
Privitera S, Bersuker G, Butcher B, Kalantarian A, Lombardo S, Bongiorno C, Geer R, Gilmer DC, Kirsch PD (2013)
Microscopy study of the conductive filament in HfO2 resistive switching memory devices
in Microelectronic engineering
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Privitera S, Bersuker G, Butcher B, Kalantarian A, Lombardo S, Bongiorno C, Geer R, Gilmer DC, Kirsch PD (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] Natl Res Council CNR, IMM, I-95121 Catania, Italy
[ 2 ] SEMATECH, Albany, NY USA
[ 3 ] CNSE, Albany, NY USA
[ 4 ] Stanford Univ, Stanford, CA 94305 USA (literal)
- Titolo
- Microscopy study of the conductive filament in HfO2 resistive switching memory devices (literal)
- Abstract
- A detailed physical analysis of the conductive filament electrically formed in HfO2-based resistive switching memory devices with both Hf and Ti metal oxygen exchange layers is presented. The filament, observed by applying transmission electron microscopy (TEM), scanning TEM (STEM), and electron energy loss spectroscopy (EELS) techniques to 50 x 50 nm(2) cells, is a cone-shaped metal-rich region in the HfO2 dielectric of the resistive switching device. (literal)
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