Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/24/26/265707 (literal)

Alternative label

• Rodolfo Araneo1 and Christian Falconi2,3 (2013)
  Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Rodolfo Araneo1 and Christian Falconi2,3 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 DIAEE--Electrical Engineering Division, 'Sapienza' University of Rome, Via Eudossiana 18, 00184, Rome, Italy 2 Department of Electronic Engineering, University of Rome 'Tor Vergata', Via del Politecnico 1, 00133, Rome, Italy 3 CNR IDASC, Via Fosso del Cavaliere, 100, 00133 Rome, Italy (literal)

Titolo

• Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion (literal)

Abstract

• Quasi-1D piezoelectric nanostructures may offer unprecedented sensitivity for transducing minuscule input mechanical forces into high output voltages due to both scaling laws and increased piezoelectric coefficients. However, until now both theoretical and experimental studies have suggested that, for a given mechanical force, lateral bending of piezoelectric nanowires results in lower output electric potentials than vertical compression. Here we demonstrate that this result only applies to nanostructures with a constant cross-section. Moreover, though it is commonly believed that the output electric potential of a strained piezo-semiconductive device can only be reduced by the presence of free charges, we show that the output piezopotential of laterally bent tapered nanostructures, with typical doping levels and very small input forces, can be even increased up to two times by free charges. Our analyses confirm that, though not optimal for piezoelectric energy harvesting, lateral bending of tapered nanostructures with typical doping levels can be ideal for transducing tiny input mechanical forces into high and accessible piezopotentials. Our results provide guidelines for designing high-performance piezo-nano-devices for energy harvesting, mechanical sensing, piezotronics, piezo-phototronics, and piezo-controlled chemical reactions, among others. (literal)

Prodotto di

• Caratterizzazione di sensori commerciali e sviluppo di nuovi convertitori piezoelettrici per il recupero di energia. (SP.P06.008.004) (Modulo)
• Istituto di Acustica e Sensoristica \"Orso Mario Corbino\" (IDASC) (Istituto)

Autore CNR

• CHRISTIAN FALCONI (Persona)

Incoming links:

Autore CNR di

• CHRISTIAN FALCONI (Persona)

Prodotto

• Istituto di Acustica e Sensoristica \"Orso Mario Corbino\" (IDASC) (Istituto)
• Caratterizzazione di sensori commerciali e sviluppo di nuovi convertitori piezoelettrici per il recupero di energia. (SP.P06.008.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)