http://www.cnr.it/ontology/cnr/individuo/prodotto/ID272106
High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling (Contributo in volume (capitolo o saggio))
- Type
- Label
- High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling (Contributo in volume (capitolo o saggio)) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1007/978-3-319-01988-8 (literal)
- Alternative label
Philipp Loeper, Mariaconcetta Canino, Manuel Schnabel, Caterina Summonte, Stefan Janz, and Margit Zacharias (2013)
High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling
Springer, London (Regno Unito) in High-Efficiency Solar Cells, 2013
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Philipp Loeper, Mariaconcetta Canino, Manuel Schnabel, Caterina Summonte, Stefan Janz, and Margit Zacharias (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
- High-Efficiency Solar Cells (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Fraunhofer ISE
CNR-IMM
IMTEK (literal)
- Titolo
- High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
- 978-3-319-01987-1 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
- XiaodongWang, Zhiming M.Wang Editors (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
- XiaodongWang Zhiming M.Wang Editors (literal)
- Abstract
- Abstract Silicon nanocrystals (Si NCs) embedded in Si-based dielectrics provide
a Si-based high-bandgap material (1.7 eV) and enable the construction of crystalline
Si tandem solar cells. This chapter focusses on Si NC embedded in silicon
carbide, because silicon carbide offers electrical conduction through the matrix
material. The material development is reviewed, and optical modeling is introduced
as a powerful method to monitor the four material components, amorphous and
crystalline silicon as well as amorphous and crystalline silicon carbide. In the
second part of this chapter, recent device developments for the photovoltaic characterization
of Si NCs are examined. The controlled growth of Si NCs involves
high-temperature annealing which deteriorates the properties of any previously
established selective contacts. A membrane-based device is presented to overcome
these limitations. In this approach, the formation of both selective contacts is
carried out after high-temperature annealing and is therefore not affected by the
latter. We examine p-i-n solar cells with an intrinsic region made of Si NCs
embedded in silicon carbide. Device failure due to damaged insulation layers is
analyzed by light beam-induced current measurements. An optical model of the
device is presented for improving the cell current. A characterization scheme for Si
NC p-i-n solar cells is presented which aims at determining the fundamental
transport and recombination properties, i.e., the effective mobility lifetime product,
of the nanocrystal layer at device level. For this means, an illumination-dependent
analysis of Si NC p-i-n solar cells is carried out within the framework of the
constant field approximation. The analysis builds on an optical device model,
which is used to assess the photogenerated current in each of the device layers.
Illumination-dependent current-voltage curves are modelled with a voltagedependent
current collection function with only two free parameters, and excellent
agreement is found between theory and experiment. An effective mobility lifetime
product of 10
?10 cm2/V is derived and confirmed independently from an alternative
method. The procedure discussed in this chapter is proposed as a characterization
scheme for further material development, providing an optimization parameter (the
effective mobility lifetime product) relevant for the photovoltaic performance of Si
NC films. (literal)
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