Direct growth of quasifreestanding epitaxial graphene on nonpolar SiC surfaces (Articolo in rivista)

Type
Label
  • Direct growth of quasifreestanding epitaxial graphene on nonpolar SiC surfaces (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.88.085408 (literal)
Alternative label
  • M. Ostler, I. Deretzis, S. Mammadov, F. Giannazzo, G. Nicotra, C. Spinella, Th. Seyller, A. La Magna (2013)
    Direct growth of quasifreestanding epitaxial graphene on nonpolar SiC surfaces
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Ostler, I. Deretzis, S. Mammadov, F. Giannazzo, G. Nicotra, C. Spinella, Th. Seyller, A. La Magna (literal)
Pagina inizio
  • 085408 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • During the graphitization of polar SiC(0001) surfaces through thermal decomposition, a strongly bound carbon-rich layer forms at the graphene/SiC interface. This layer is responsible for the system's high electron-doping and contributes to the degradation of the electrical properties of the overlying graphene. In this study, with the aid of photoelectron spectroscopy, low-energy electron microscopy, low-energy electron diffraction, and the density functional theory, we show that if the graphitization process starts from the nonpolar (11 (2) over bar0) and (1 (1) over bar 00) surfaces instead, no buffer layer is formed. We correlate this direct growth of quasi-free-standing graphene over the substrate with the inhibited formation of tetrahedral bonds between the nonpolar surface and the carbon monolayer. (literal)
Titolo
  • Direct growth of quasifreestanding epitaxial graphene on nonpolar SiC surfaces (literal)
Abstract
  • During the graphitization of polar SiC(0001) surfaces through thermal decomposition, a strongly bound carbon-rich layer forms at the graphene/SiC interface. This layer is responsible for the system's high electron-doping and contributes to the degradation of the electrical properties of the overlying graphene. In this study, with the aid of photoelectron spectroscopy, low-energy electron microscopy, low-energy electron diffraction, and the density functional theory, we show that if the graphitization process starts from the nonpolar (11 (2) over bar0) and (1 (1) over bar 00) surfaces instead, no buffer layer is formed. We correlate this direct growth of quasi-free-standing graphene over the substrate with the inhibited formation of tetrahedral bonds between the nonpolar surface and the carbon monolayer. (literal)
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