Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4818332 (literal)

Alternative label

• Korinek, M. and Schnabel, M. and Canino, M. and Kozak, M. and Trojanek, F. and Salava, J. and Loeper, P. and Janz, S. and Summonte, C. and Maly, P. (2013)
  Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers
  in Journal of applied physics; AIP Publishing LLC, Melville, NY 11747 (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Korinek, M. and Schnabel, M. and Canino, M. and Kozak, M. and Trojanek, F. and Salava, J. and Loeper, P. and Janz, S. and Summonte, C. and Maly, P. (literal)

Pagina inizio

• 073101-1 (literal)

Pagina fine

• 073101-5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://jap.aip.org/resource/1/japiau/v114/i7/p073101_s1?ver=pdfcov (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 114 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 7 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Korinek, M (Reprint Author), Charles Univ Prague, Fac Math & Phys, Dept Chem Phys & Opt, Ke Karlovu 3, CR-12116 Prague, Czech Republic. Korinek, M.; Kozak, M.; Trojanek, F.; Salava, J.; Maly, P., Charles Univ Prague, Fac Math & Phys, Dept Chem Phys & Opt, CR-12116 Prague, Czech Republic. Schnabel, M.; Loeper, P.; Janz, S., Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany. Canino, M.; Summonte, C., CNR, Inst Microelect & Microsyst, I-40129 Bologna, Italy. (literal)

Titolo

• Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers (literal)

Abstract

• The influence of boron (B)-doping and remote plasma hydrogen passivation on the photoexcited charge carrier recombination in silicon nanocrystal/SiC multilayers was investigated in detail. The samples were prepared by high temperature annealing of amorphous (intrinsic and B-doped) Si1-xCx/SiC superlattices. The photoluminescence (PL) intensity of samples with B-doped silicon rich carbide layers was found to be up to two orders of magnitude larger and spectrally red shifted in comparison with that of the other samples. Hydrogen passivation leads to an additional increase in PL intensities. The PL decay can be described well by a mono-exponential function with a characteristic decay time of a few microseconds. This behavior agrees well with the picture of localized PL centers (surface states) together with the passivation of non-radiative defects by boron. The samples with B-doped SiC layers exhibit an additional PL band in the green spectral region that is quenched by hydrogen passivation. Its origin is attributed to defects due to suppression of crystallization of amorphous SiC layers as a result of B-doping. Measurement of ultrafast transient transmission allowed us to study the initial (picosecond) carrier dynamics. It was found to be dependent of pump intensity and interpreted in terms of multiparticle electron-hole recombination. (C) 2013 AIP Publishing LLC. (literal)

Editore

• AIP Publishing LLC (Editore)

Prodotto di

• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MARIACONCETTA CANINO (Unità di personale interno)
• CATERINA SUMMONTE (Persona)

Insieme di parole chiave

• Keywords of "Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di tecnologie e realizzazione di dispositivi e microsistemi fotonici, fluidici e meccanici (MD.P05.011.001) (Modulo)

Autore CNR di

• CATERINA SUMMONTE (Persona)
• MARIACONCETTA CANINO (Unità di personale interno)

Editore di

• AIP Publishing LLC (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers" (Insieme di parole chiave)