Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination (Articolo in rivista)

Type
Label
  • Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4789441 (literal)
Alternative label
  • Loeper, Philipp and Canino, Mariaconetta and Qazzazie, Dureid and Schnabel, Manuel and Allegrezza, Marco and Summonte, Caterina and Glunz, Stefan W. and Janz, Stefan and Zacharias, Margit (2013)
    Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination
    in Applied physics letters; AIP Publishing LLC, Melville, NY 11747 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Loeper, Philipp and Canino, Mariaconetta and Qazzazie, Dureid and Schnabel, Manuel and Allegrezza, Marco and Summonte, Caterina and Glunz, Stefan W. and Janz, Stefan and Zacharias, Margit (literal)
Pagina inizio
  • 033507-1 (literal)
Pagina fine
  • 033507-4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 102 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Loper, P (Reprint Author), Fraunhofer ISE, Heidenhofstr 2, D-79110 Freiburg, Germany. Loeper, Philipp; Qazzazie, Dureid; Schnabel, Manuel; Glunz, Stefan W.; Janz, Stefan, Fraunhofer ISE, D-79110 Freiburg, Germany. Canino, Mariaconetta; Allegrezza, Marco; Summonte, Caterina, CNR IMM, I-40129 Bologna, Italy. Zacharias, Margit, Univ Freiburg, IMTEK, D-79110 Freiburg, Germany. (literal)
Titolo
  • Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination (literal)
Abstract
  • An illumination-dependent analysis of silicon nanocrystal p-i-n solar cells is presented within the framework of the constant field approximation. Silicon nanocrystals in silicon carbide were prepared by solid-phase crystallization and contacted with doped a-SixC1-x:H. This paper aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. Illumination-dependent current-voltage curves are modelled with a voltage-dependent collection function with only two free parameters, and excellent agreement is found between theory and experiment. An effective mobility lifetime product of 10(-10) cm(2)/V is derived and confirmed independently from an alternative method. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789441] (literal)
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