Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations (Articolo in rivista)

Type
Label
  • Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/ 1.OE.52.8.087110 (literal)
Alternative label
  • Sandro Rao Giuseppe Coppola Caterina Summonte Mariano Antonio Gioffrè Francesco Giuseppe Della Corte (2013)
    Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations
    in Optical engineering (Bellingham, Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sandro Rao Giuseppe Coppola Caterina Summonte Mariano Antonio Gioffrè Francesco Giuseppe Della Corte (literal)
Pagina inizio
  • 087110-1 (literal)
Pagina fine
  • 087110-5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://opticalengineering.spiedigitallibrary.org/article.aspx?articleid=1730028 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 52 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Università degli Studi \"Mediterranea\" Dipartimento di Ingegneria dell'Informazione, delle Infrastrutture e dell'Energia Sostenibile\" (DIIES) Reggio Calabria, Italy Institute for Microelectronics and Microsystems--Consiglio Nazionale delle Ricerche (IMM-CNR) Unit of Napoli Institute for Microelectronics and Microsystems--Consiglio Nazionale delle Ricerche (IMM-CNR)-Unit of Bologna (literal)
Titolo
  • Electro-optical effect in hydrogenated amorphous silicon-based waveguide-integrated p-i-p and p-i-n configurations (literal)
Abstract
  • Abstract. A p-i-p configuration of an electro-optical modulator based on hydrogenated amorphous silicon (a-Si:H) is characterized and compared with an a-Si:H based p-i-n modulator. In particular, we estimate the performances in terms of optical losses, voltage-length product, and bandwidth at ? ¼ 1550 nm for waveguide-integrated p-i-p versus p-i-n configurations. Both devices are fabricated on a silicon substrate by plasma enhanced chemical vapor deposition at low temperature ensuring the back-end integration with a CMOS microchip. We demonstrate a factor of merit for the p-i-p waveguide integrated Fabry-Perot resonator of V? ×L? ¼ 19 V × cm allowing the design of shorter devices with respect to p-i-n structure. (literal)
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