http://www.cnr.it/ontology/cnr/individuo/prodotto/ID269445

SiC synthesis by fullerene free jets on Si(111) at low temperatures (Contributo in atti di convegno)

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SiC synthesis by fullerene free jets on Si(111) at low temperatures (Contributo in atti di convegno) (literal)

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L. Aversa, R.Verucchi, M. Pedio, S. Iannotta (2002)
SiC synthesis by fullerene free jets on Si(111) at low temperatures
in 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), LINKOPING, SWEDEN, SEP 02-25, 2002
(literal)

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CNR, IFN, Sec Trento Inst Photon & Nanotechnol, IT-38050 Povo, Italy TASC, INFM, IT-34012 Basovizza, Trieste, Italy (literal)

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We have developed a new technique for SiC heteroepitaxy on Si by means of supersonic free jets of C-60. The carbide synthesis can be achieved by the kinetic activation of the process. The electronic and structural properties of the film can be controlled by monitoring the beam parameters (flux and particle energy). SiC films were grown in Ultra High Vacuum on Si(l 11)7x7, at substrates temperatures of 800degreesC and 750degreesC, using two supersonic beams Of C-60 characterized by a particle energy of 5eV and 20eV. Surface electronic and structural characterisations were done both in-situ and the structural properties improved. (literal)

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