Kinetics of interfacial charges in hybrid GaAs/oligothiophene semiconducting heterojunctions (Articolo in rivista)

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Label
  • Kinetics of interfacial charges in hybrid GaAs/oligothiophene semiconducting heterojunctions (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Cabanillas-Gonzalez, J; Gambetta, A; Zavelani-Rossi, M; Lanzani, G (2007)
    Kinetics of interfacial charges in hybrid GaAs/oligothiophene semiconducting heterojunctions
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cabanillas-Gonzalez, J; Gambetta, A; Zavelani-Rossi, M; Lanzani, G (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 91 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Politecn Milan, INFM, ULTRAS, Dipartmento Fis,IFN CNR, I-20133 Milan, Italy (literal)
Titolo
  • Kinetics of interfacial charges in hybrid GaAs/oligothiophene semiconducting heterojunctions (literal)
Abstract
  • The authors report on pump-probe measurements in a hybrid heterostructure consisting of a modified oligothiophene layer deposited over a GaAs substrate. Upon photoexcitation of the bilayer with 100 fs, a new photoinduced absorption band (PA(2)) appeared being attributed to oligothiophene cations arising from exciton diffusion and dissociation at the hybrid inorganic/organic interface. An exciton diffusion length in the organic layer of approximately 3.4 nm was estimated. (c) 2007 American Institute of Physics. (literal)
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