Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/23/46/465708 (literal)

Alternative label

• De Seta M, Capellini G, Ortolani M, Virgilio M, Grosso G, Nicotra G, Zaumseil P (2012)
  Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• De Seta M, Capellini G, Ortolani M, Virgilio M, Grosso G, Nicotra G, Zaumseil P (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scienceserver.cilea.it/pdflinks/13092113222706418.pdf (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 23 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 46 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Roma Tre, Dipartimento Fis E Amaldi, I-00146 Rome, Italy [ 2 ] CNR, Ist Foton & Nanotecnol, I-00156 Rome, Italy [ 3 ] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy [ 4 ] Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy [ 5 ] CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy [ 6 ] CNR IMM, I-95121 Catania, Italy [ 7 ] IHP, D-15236 Frankfurt, Oder, Germany (literal)

Titolo

• Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift (literal)

Abstract

• In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k center dot p model. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Dispositivi Integrabili in smart systems su substrati a basso costo (MD.P05.005.007) (Modulo)

Autore CNR

• GIUSEPPE NICOTRA (Persona)

Insieme di parole chiave

• Keywords of "Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Dispositivi Integrabili in smart systems su substrati a basso costo (MD.P05.005.007) (Modulo)

Autore CNR di

• GIUSEPPE NICOTRA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)

Insieme di parole chiave di

• Keywords of "Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift" (Insieme di parole chiave)