Luminescence properties of semi-insulating nominally-undoped CdTe crystals (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Luminescence properties of semi-insulating nominally-undoped CdTe crystals (Contributo in atti di convegno) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/SIM.2002.1242736 (literal)

Alternative label

• A. Zappettini, V. Corregidor, E. Dieguez, M. Zha, F. Bissoli, L. Zanotti (2002)
  Luminescence properties of semi-insulating nominally-undoped CdTe crystals
  in 12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002), Smolenize Castle, Slovakia, JUN 30-JUL 05, 2002
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Zappettini, V. Corregidor, E. Dieguez, M. Zha, F. Bissoli, L. Zanotti (literal)

Pagina inizio

• 110 (literal)

Pagina fine

• 113 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• Conference: 12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002) Location: SMOLENICE, SLOVAKIA Date: JUN 30-JUL 05, 2002 Sponsor(s): IEE; Slovak Acad Sci; IEEE Elect Devices Soc; CMK Ltd; Engn Control Syst (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1242736 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• 2002 12th International Conference on Semiconducting and Insulating Materials. SIMC-XII-2002 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• IEEE Catalog Number: 02CH37343 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMEM-CNR, Università Autonoma di Madrid (literal)

Titolo

• Luminescence properties of semi-insulating nominally-undoped CdTe crystals (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 0-7803-7418-5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume

• J. Breza, F. Dubecky and B. Zat'ko (literal)

Abstract

• CdTe crystals were grown by the vapour phase and by Bridgman method by using hihg purity and stoichiomety controlled source material. Nominally undoped high resistivity crystals were reproducibly obtained. A detailed photoluminescence (PL) analysis was carried out in order to investigate the compensation mechanism of the crystals. PL spectra are dominated by the bound acceptor exciton line at 1.588 eV, showing a \"p\" type character. A line at 1.583 eV is also present possibly due to III group impurities. A week 1.4 eV band was also revealed. (literal)

Editore

• IEE The Institution of Electrical Engineers (Editore)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• LUCIO ZANOTTI (Persona)
• FRANCESCO BISSOLI (Persona)
• ANDREA ZAPPETTINI (Persona)

Insieme di parole chiave

• Parole chiave di "Luminescence properties of semi-insulating nominally-undoped CdTe crystals" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FRANCESCO BISSOLI (Persona)
• ANDREA ZAPPETTINI (Persona)
• LUCIO ZANOTTI (Persona)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Editore di

• IEE The Institution of Electrical Engineers (Editore)

Insieme di parole chiave di

• Parole chiave di "Luminescence properties of semi-insulating nominally-undoped CdTe crystals" (Insieme di parole chiave)