Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates (Articolo in rivista)

Type
Label
  • Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.jcrysgro.2013.08.005 (literal)
Alternative label
  • Matteo Bosi, Giovanni Attolini, Marco Negri, CESARE FRIGERI, Elisa Buffagni, Claudio Ferrari, Tiziano Rimodi, Luigi Cristofolini, Lucrezia Aversa, Roberta Tatti, Roberto Verucchi (2013)
    Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates
    in Journal of crystal growth; Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Matteo Bosi, Giovanni Attolini, Marco Negri, CESARE FRIGERI, Elisa Buffagni, Claudio Ferrari, Tiziano Rimodi, Luigi Cristofolini, Lucrezia Aversa, Roberta Tatti, Roberto Verucchi (literal)
Pagina inizio
  • 84 (literal)
Pagina fine
  • 94 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0022024813005460 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 383 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMEM-CNR Institute, Parco Aread elle Scienze 37/A,43124 Parma,Italy Dipartimento di Fisica e Scienze della Terra, Università degli Studi di Parma,Viale G.P. Usberti 7/A,43124 Parma,Italy IMEM-CNR, sede FBK di Trento,Via alla Cascata 56/C, 38123 Trento,Italy (literal)
Titolo
  • Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates (literal)
Abstract
  • A procedure for the optimization of a 3C-SiC buffer layer for the deposition of 3C-SiC / (001) Si is described. After a standard carbonization at 1125 °C, SiH4 and C3H8 were added to the gas phase while the temperature was raised from 1125 °C to the growth temperature of 1380 °C with a controlled temperature ramp to grow a thin SiC layer. The quality and the crystallinity of the buffer layer and the presence of voids at the SiC/Si interface are related to the gas flow and to the heating ramp rate. In order to improve the buffer quality the SiH4 and C3H8 flows were changed during the heating ramp. On the optimized buffer no voids were detected and a high-quality 1.5 ?m 3C-SiC was grown to demonstrate the effectiveness of the described buffer. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it