Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1021/nl403004u (literal)

Alternative label

• Guido Petretto (1,2), Alberto Debernardi (1), and Marco Fanciulli (1,2) (2013)
  Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation
  in Nano letters (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Guido Petretto (1,2), Alberto Debernardi (1), and Marco Fanciulli (1,2) (literal)

Pagina inizio

• 4963 (literal)

Pagina fine

• 4968 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 13 (literal)

Rivista

• Nano letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (1) Laboratorio MDM, IMM-CNR, via C. Olivetti, 2 I-20864 Agrate Brianza (MB), Italy (2) Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 53, I-20125 Milano, Italy (literal)

Titolo

• Donor Wave Functions Delocalization in Silicon Nanowires: The Peculiar [011] Orientation (literal)

Abstract

• Abstract: The localization of the donor electron wave function can be of key importance in various silicon applications, since for example it determines the interactions between neighboring donors. Interestingly, the physical confinement of the electrons in quasi-one-dimensional nanostructures, like silicon nanowires, noticeably affects this property. Using fully ab initio calculations, we show that the delocalization of the donor electron wave function along the axis of a nanowire is much greater in [011] oriented nanowires for phosphorus and selenium donors. We also demonstrate that its value can be controlled by applying a compressive or tensile uniaxial strain. Finally, we discuss the implications of these features from both an experimental and a theoretical point of view. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)

Autore CNR

• ALBERTO DEBERNARDI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)

Autore CNR di

• ALBERTO DEBERNARDI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nano letters (Rivista)