Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions (Articolo in rivista)

Type
Label
  • Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4795123 (literal)
Alternative label
  • Shik A. [ 1 ], Chen C. Y., Pitanti A. [ 2,3,4 ], Tredicucci A. [ 2,3 ], Ercolani D. [ 2,3 ], Sorba L. [ 2,3 ], Beltram, F. [ 2,3 ] ; Ruda H. E. [ 1 ] (2013)
    Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions
    in Journal of applied physics; AMER INST PHYSICS, MELVILLE, NY 11747-4501 USA (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Shik A. [ 1 ], Chen C. Y., Pitanti A. [ 2,3,4 ], Tredicucci A. [ 2,3 ], Ercolani D. [ 2,3 ], Sorba L. [ 2,3 ], Beltram, F. [ 2,3 ] ; Ruda H. E. [ 1 ] (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 113 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Toronto, Ctr Adv Nanotechnol, Toronto, ON M5S 3E3, Canada [ 2 ] Scuola Normale Super Pisa, NEST, I-56127 Pisa, Italy [ 3 ] CNR, Ist Nanosci, I-56127 Pisa, Italy [ 4 ] CALTECH, Thomas J Watson Sr Lab Appl Phys, Pasadena, CA 91125 USA (literal)
Titolo
  • Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions (literal)
Abstract
  • The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions were investigated theoretically and experimentally. Analysis of the current-voltage characteristics showed that the current through the heterojunction is caused mostly by generation-recombination processes in the InSb and at the heterointerface. Due to the partially overlapping valence band of InSb and the conduction band of InAs, the second process is fast and activationless. Theoretical analysis showed that, depending on the heterojunction parameters, the flux of non-equilibrium minority carriers may have a different direction, explaining the experimentally observed non-monotonic coordinate dependence of the electron beam induced current. (literal)
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