http://www.cnr.it/ontology/cnr/individuo/prodotto/ID263035

High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD (Articolo in rivista)

Type

Label

High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD (Articolo in rivista) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Cappella, A.b and Battaglia, J.-L.a and Schick, V.a and Kusiak, A.a and Lamperti, A.c and Wiemer, C.c and Hay, B.b (2013)
High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD
in Advanced engineering materials (Print); J. Wiley & sons, New York (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Cappella, A.b and Battaglia, J.-L.a and Schick, V.a and Kusiak, A.a and Lamperti, A.c and Wiemer, C.c and Hay, B.b (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://www.scopus.com/inward/record.url?eid=2-s2.0-84881019875&partnerID=40&md5=e1d38d3725f62b642374e8199acf08cc (literal)

Rivista

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

Université de BordeauxInstitut de Mécanique et d'Ingénierie de Bordeaux IUMR CNRS 5426, 351 cours de la libération33405TalenceFrance; Laboratoire National de Métrologie et d'EssaisLNE29 rue Roger Hennequin78197TrappesFrance; Laboratorio MDMIMM-CNRvia C. Olivetti 220864Agrate Brianza (MB)Italy (literal)

Titolo

High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD (literal)

Abstract

Al2O3 grown by atomic layer deposition could be proposed as a nonactive layer for back end processes in view of the integration of scaled phase change memory devices. In this paper we report on thermal characterization from 50 to 600°C of amorphous Al2O3 thin films grown on thermally oxidized silicon substrate at a temperature of 100°C and capped with a 30nm thick Pt layer. The effects of low temperature deposition and of a post-deposition rapid thermal annealing process (RTP) on the thermal properties of the films are investigated using a modulated photo-thermal radiometry technique coupled with post-annealing morphological characterizations. Degassing process occurring at high temperature greatly affects the film surface quality, though measurements of the films after RTP show that the thermal conductivity of amorphous Al2O3 increases as a function of temperature from 1.8WK-1m-1 at 50°C to 3.3WK-1m-1 at 600°C. At the same time, the value of the thermal boundary resistance at the Pt-Al2O3 interface decreases from 1.02×10-7Km2W-1 at 50°C to 4.8×10-8Km2W-1 at 600°C. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (literal)

Editore