Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/sia.5053 (literal)

Alternative label

• Lamperti, A.a and Cianci, E.a and Salicio, O.a and Lamagna, L.a and Spiga, S.a and Fanciulli, M.a b (2013)
  Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories
  in SIA. Surface and interface analysis; J. Wiley & sons, New York (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lamperti, A.a and Cianci, E.a and Salicio, O.a and Lamagna, L.a and Spiga, S.a and Fanciulli, M.a b (literal)

Pagina inizio

• 390 (literal)

Pagina fine

• 393 (literal)

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• cited By (since 1996)2 (literal)

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• http://www.scopus.com/inward/record.url?eid=2-s2.0-84872867967&partnerID=40&md5=9e3ef1201b176c962a3127ba135f8326 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 45 (literal)

Rivista

• SIA. Surface and interface analysis (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratorio MDM, IMM-CNR MB, Via Olivetti 2, 20864 Agrate Brianza, Italy; Dipartimento di Scienza Dei Materiali, Università di Milano-Bicocca, Milano, Italy (literal)

Titolo

• Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (literal)

Abstract

• High dielectric constant (high-?) oxides are foreseen replacement materials in innovative metal-oxide-semiconductor devices and memory capacitors. In particular, when considering nonvolatile memories, the charge-trapping concept appears to be a promising solution for flash-type floating gate replacement. Among the high-? oxide properties to be considered, it is essential to study the compatibility towards the integration of these materials in a complementary metal-oxide-semiconductor process, in particular to control the stack integrity and any onset of diffusion phenomena upon thermal treatments at temperatures higher than 1000 °C. Here, we report on the results obtained from time-of-flight secondary ion mass spectrometry depth profiling of stacks on the basis of high-?/SiO2/Si, integrating HfO 2, ZrO2, or DyScOx as charge-trapping layer or high-?/SixNy/SiO2/Si integrating DyScOx as control (blocking) oxide. The high-? oxides are all grown by atomic layer deposition. We will discuss the role of the different substrate/oxide coupling in preserving the stack and propose the better combinations in terms of thermal stability. Copyright © 2012 John Wiley & Sons, Ltd. Copyright © 2012 John Wiley & Sons, Ltd. (literal)

Editore

• J. Wiley & sons (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ELENA CIANCI (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)
• SABINA SPIGA (Persona)

Insieme di parole chiave

• Parole chiave di "Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)
• ELENA CIANCI (Persona)
• ALESSIO LAMPERTI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• SIA. Surface and interface analysis (Rivista)

Editore di

• J. Wiley & sons (Editore)

Insieme di parole chiave di

• Parole chiave di "Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories" (Insieme di parole chiave)