Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4706561 (literal)

Alternative label

• Vellei, A. and Fallica, R. and Sangalli, D. and Lamperti, A. (2012)
  Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates
  in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Vellei, A. and Fallica, R. and Sangalli, D. and Lamperti, A. (literal)

Pagina inizio

• 093501-1 (literal)

Pagina fine

• 093501-6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• cited By (since 1996)0 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84864213048&partnerID=40&md5=acb6484dee8c6544f3e69233ab9624ac (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 111 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 9 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratorio MDM, IMM-CNR, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy (literal)

Titolo

• Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates (literal)

Abstract

• Nickel silicide is considered the best candidate material to achieve the lowest contact resistance in sub 45 nm CMOS devices. NiSi films with thickness 20-60 nm were prepared by rapid thermal annealing of Ni (temperature 230 °C-780 °C) on top of thin 230 nm silicon-on-insulator substrates, with a constant formation ratio. Based on film independent characterizations, a novel model for the interpretation of spectroscopic ellipsometry data, featuring a combination of two Lorentzian oscillators and one Drude dispersion model, is proposed, and its goodness is checked in comparison to other known models. This new approach is proved to deliver more accurate estimation of the film thickness and resistivity. © 2012 American Institute of Physics. (literal)

Editore

• American Institute Of Physics (AIP) (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ALESSIO LAMPERTI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ALESSIO LAMPERTI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Editore di

• American Institute Of Physics (AIP) (Editore)

Insieme di parole chiave di

• Keywords of "Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates" (Insieme di parole chiave)