Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions (Articolo in rivista)

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  • Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2011.10.128 (literal)
Alternative label
  • Vangelista, S.a and Mantovan, R.a and Cocco, S.a and Lamperti, A.a and Salicio, O.a and Fanciulli, M.a b (2012)
    Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Vangelista, S.a and Mantovan, R.a and Cocco, S.a and Lamperti, A.a and Salicio, O.a and Fanciulli, M.a b (literal)
Pagina inizio
  • 4617 (literal)
Pagina fine
  • 4621 (literal)
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  • cited By (since 1996)2 (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84860276952&partnerID=40&md5=9e2baab84a541dafff4a95ea8e642a86 (literal)
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  • 520 (literal)
Rivista
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  • 5 (literal)
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  • 14 (literal)
Note
  • Scopu (literal)
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  • Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20846 Agrate Brianza (MB), Italy; Dipartimento di Scienza Dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20126 Milano, Italy (literal)
Titolo
  • Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions (literal)
Abstract
  • A possible route for the synthesis of Fe3O4, Fe, and Fe/Fe3O4 bi-layers with chemical vapor deposition by employing the same Fe3(CO)12 carbonyl precursor is presented. The comprehensive structural, chemical, and morphological investigation of the as-deposited thin single films and bi-layers is performed by X-ray diffraction, X-ray reflectivity, Raman spectroscopy, and time-of-flight secondary ion mass spectrometry depth profiling. We present the possibility of performing the deposition of pure metallic Fe and Fe3O 4/?-Fe2O3 by adjusting the deposition pressure from 10- 3/- 4 Pa to 1 Pa, respectively. The integration of Fe3O4 thin films in a magnetic tunnel junction stack fully synthesized by in situ atomic layer and chemical vapor deposition processes is also presented, showing good stack stability and marginal interdiffusion. © 2011 Elsevier B.V. All rights reserved. (literal)
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