Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mee.2010.10.014 (literal)

Alternative label

• S.M. Pietralunga, M. Feré, M. Lanata, G. Radnóczi, G.b F. Misják, A. Lamperti, M. Martinelli, P.M. Ossi (2011)
  Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties
  in Microelectronic engineering; elsevier B.V., Amsterdam (Paesi Bassi)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• S.M. Pietralunga, M. Feré, M. Lanata, G. Radnóczi, G.b F. Misják, A. Lamperti, M. Martinelli, P.M. Ossi (literal)

Pagina inizio

• 518 (literal)

Pagina fine

• 521 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• cited By (since 1996)1 (literal)

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• http://www.scopus.com/inward/record.url?eid=2-s2.0-79751529108&partnerID=40&md5=745e1cc4b35a8aadb3a3f9dc4d0e500a (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 88 (literal)

Rivista

• Microelectronic engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CoreCom, via G. Colombo, 81, 20133 Milano, Italy; Research Institute for Technical Physics and Materials Science, Konkoly-Thege M. út 29-33, H-1121 Budapest, Hungary; Laboratorio MDM, IMM, CNR, via C. Olivetti 2, 20041 Agrate Brianza (MB), Italy; Politecnico di Milano, Dept. of Electronics and Information, via Ponzio 34-5, 20133 Milano, Italy; Politecnico di Milano, Dept. of Energy, via Ponzio 34-3, 20133 Milano, Italy; PoliCom Fondazione Politecnico di Milano, via G. Colombo, 81, 20133 Milano, Italy (literal)

Titolo

• Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties (literal)

Abstract

• Ge thin films are epitaxially grown onto (1 0 0) Si substrates by DC-Pulsed Magnetron Sputtering. Relaxed single crystalline layers, with slightly misoriented domains are identified by XRD, TEM and HREM. Planar defects and threading dislocations are the relevant lattice imperfections. As-deposited Ge films are p-type without the need for intentional doping, even in the absence of grain boundaries. A pronounced flatness in the near IR absorption spectra is evident, in the absence of strong interfacial strain. This could be traced to a bandgap narrowing effect due to intragap states related to defects in the interfacial region. Photoconductive response around ? = 1.5 ?m is flat and an equivalent responsivity R eff| Vbias = -1V = 1.0088 A/W at ? = 1.5 ?m has been estimated. DC-Pulsed Magnetron Sputtering is therefore an attractive solution, deserving further development, to build near-infrared C-MOS compatible photodetectors, particularly suitable for low-speed applications. © 2010 Elsevier B.V. All rights reserved. (literal)

Editore

• elsevier B.V. (Editore)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ALESSIO LAMPERTI (Unità di personale interno)
• SILVIA MARIA PIETRALUNGA (Persona)

Insieme di parole chiave

• Parole chiave di "Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ALESSIO LAMPERTI (Unità di personale interno)
• SILVIA MARIA PIETRALUNGA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)

Editore di

• elsevier B.V. (Editore)

Insieme di parole chiave di

• Parole chiave di "Sputtered Ge-on-Si heteroepitaxial pn junctions: Nanostructure, interface morphology and photoelectrical properties" (Insieme di parole chiave)