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Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices (Articolo in rivista)

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Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices (Articolo in rivista) (literal)

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Ielmini, D.a and Spiga, S.b and Nardi, F.a and Cagli, C.a and Lamperti, A.b and Cianci, E.b and Fanciulli, M.b c (2011)
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
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Ielmini, D.a and Spiga, S.b and Nardi, F.a and Cagli, C.a and Lamperti, A.b and Cianci, E.b and Fanciulli, M.b c (literal)

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Dipartimento di Elettronica e Informazione and IU.NET, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano (MI), Italy; Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza, Italy; Dipartimento di Scienza Dei Materiali, Universit? Degli Studi di Milano-Bicocca, Piazza dell'Ateneo Nuovo, 1-20126, Milano, Italy (literal)

Titolo

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices (literal)

Abstract

Resistive switching memory (RRAM) based on the redox-induced conductivity change in some metal oxides attracts considerable interest as a new technology for next-generation nonvolatile electronic storage. Although resistance-switching phenomena in several transition metal oxides have been known from decades, the details of the switching mechanisms and the nature of the different resistive states are still largely debated. For nonvolatile memory applications, the scaling potential of RRAMs is the most relevant issue, and understanding the scaling capability of RRAM devices requires a sound interpretation of resistance-switching operation and reliability aspects. This work addresses the scaling dependence of RRAM switching parameters. The dependence on the electrode area and on the size of the conductive filament (CF) responsible for low-resistance memory state is investigated. The RRAM conduction modes depending on CF size are discussed based on temperature dependent resistance analysis. Reset characteristics in different resistance states are explained by a Joule heating model for CF oxidation. © 2011 American Institute of Physics. (literal)

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