Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1143/APEX.5.124001 (literal)

Alternative label

• De Michielis M, Prati E, Fanciulli M, Fiori G, Iannaccone G (2012)
  Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation
  in Applied physics express
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• De Michielis M, Prati E, Fanciulli M, Fiori G, Iannaccone G (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://apex.jsap.jp/link?APEX/5/124001/ (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 5 (literal)

Rivista

• Applied physics express (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 12 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] CNR IMM, Lab MDM, I-20864 Agrate Brianza, Italy [ 2 ] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy [ 3 ] Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy (literal)

Titolo

• Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation (literal)

Abstract

• The effect of the geometrical confinement on the shell filling in quantum dots obtained in silicon-on-insulator (SOI) tri-sided gate metal oxide semiconductor single-electron transistors (MOSSETs) is investigated on the basis of the current spin density functional theory. Variations of the geometric shape in nanowire SOI-MOSSETs with square section entail important changes in the valley filling sequences, whereas the variability of the gate length does not imply a significant modification of the filling patterns. Our results provide quantitative insights towards the shell engineering of silicon quantum dots for qubits with stable valley filling patterns. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)

Autore CNR

• MARCO FANCIULLI (Persona)
• ENRICO PRATI (Persona)

Insieme di parole chiave

• Parole chiave di "Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e Dispositivi a Dimensionalità Ridotta (MD.P06.036.001) (Modulo)

Autore CNR di

• MARCO FANCIULLI (Persona)
• ENRICO PRATI (Persona)
• http://www.cnr.it/ontology/cnr/individuo/unitaDiPersonaleEsterno/ID22871

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics express (Rivista)

Insieme di parole chiave di

• Parole chiave di "Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation" (Insieme di parole chiave)