http://www.cnr.it/ontology/cnr/individuo/prodotto/ID262930
Electrical transport and depletion region in dry-etched Si-based nanostructures (Articolo in rivista)
- Type
- Label
- Electrical transport and depletion region in dry-etched Si-based nanostructures (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1088/0268-1242/27/4/045016 (literal)
- Alternative label
Cardile P, Franzo G, Krauss TF, Priolo F, O'Faolain L (2012)
Electrical transport and depletion region in dry-etched Si-based nanostructures
in Semiconductor science and technology (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Cardile P, Franzo G, Krauss TF, Priolo F, O'Faolain L (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] CNR IMM UOS Catania, I-95123 Catania, Italy
[ 2 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[ 3 ] Scuola Super Catania, I-95123 Catania, Italy
[ 4 ] Univ St Andrews, Sch Phys & Astron, SUPA, St Andrews KY16 9SS, Fife, Scotland (literal)
- Titolo
- Electrical transport and depletion region in dry-etched Si-based nanostructures (literal)
- Abstract
- We fabricated p(+)-p-p(+) junctions in order to properly investigate the electrical conduction across a boron implanted silicon-on-insulator (SOI) nanostructured pattern, like photonic crystals and shallow-etched trenches. By analysis of the I-V measurements, we demonstrate that a depletion region is present and it is induced by the dry etching process of reactive ion etching. This depletion region does not depend on the geometry of the dry-etched nanostructure, but on the doping level of the substrate. (literal)
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