Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Alternative label

• Perego, M. and Molle, A. and Seguini, G. (2012)
  Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging
  in Applied physics letters (Online)
  (literal)

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• Perego, M. and Molle, A. and Seguini, G. (literal)

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• cited By (since 1996)1 (literal)

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• http://www.scopus.com/inward/record.url?eid=2-s2.0-84870020632&partnerID=40&md5=5b6a0fbfea95760d25927ebf76f3f0d9 (literal)

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• 101 (literal)

Rivista

• Applied physics letters (Rivista)

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• 21 (literal)

Note

• Scopu (literal)

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• Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy (literal)

Titolo

• Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging (literal)

Abstract

• A dependence of the binding energy of the Hf 4f and O 1s photoemission lines on the thickness of the HfO2 film is identified in HfO 2/Si heterojunctions and associated with differential charging phenomena. No shifts of Hf 4f and O 1s binding energies are observed in HfO 2/Ge heterojunctions, irrespective of the HfO2 film thickness. The time evolution of Hf 4f and Ge 3d signals correlates with a large number of electrically active traps, which are close to the Ge valence bands and determine a negative charge builds-up at the interface, causing the commonly observed p-type surface inversion in n-Ge. © 2012 American Institute of Physics. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MICHELE PEREGO (Unità di personale interno)
• ALESSANDRO MOLLE (Persona)
• GABRIELE SEGUINI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ALESSANDRO MOLLE (Persona)
• MICHELE PEREGO (Unità di personale interno)
• GABRIELE SEGUINI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)