Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Alternative label

• Frascaroli, J.a and Seguini, G.a and Cianci, E.a and Saynova, D.b and Van Roosmalen, J.b and Perego, M.a (2013)
  Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition
  in Physica status solidi. A, Applications and materials science (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Frascaroli, J.a and Seguini, G.a and Cianci, E.a and Saynova, D.b and Van Roosmalen, J.b and Perego, M.a (literal)

Pagina inizio

• 732 (literal)

Pagina fine

• 736 (literal)

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• cited By (since 1996)1 (literal)

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• http://www.scopus.com/inward/record.url?eid=2-s2.0-84875852671&partnerID=40&md5=61e97357a3b662921ce646889d7d7bca (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 210 (literal)

Rivista

• Physica status solidi. A, Applications and materials science (Rivista)

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• 4 (literal)

Note

• Scopu (literal)

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• Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy; ECN Solar Energy, Westerduinweg 3, 1755 ZG Petten, Netherlands (literal)

Titolo

• Surface passivation for ultrathin Al2O3 layers grown at low temperature by thermal atomic layer deposition (literal)

Abstract

• Thin layers of Al2O3 with thickness tox <= 8 nm were grown by thermal atomic layer deposition at low temperature of 100 °C and applied to achieve functional surface passivation of crystalline silicon substrates. Measurements of the effective lifetime were performed to characterize the surface passivation effect. Lifetime values in the range of 0.5 ms were obtained for Al2O3 films with tox >= 6 nm upon post-deposition annealing (PDA) at 250 °C in N2 atmosphere. However, when the thickness of the Al2O3 films was reduced to 4 nm, lifetime values well below 0.1 ms were observed even after PDA. Combined capacitance-voltage and conductance-voltage measurements were carried out to extract the amount of charges located near the silicon-oxide interface and the density of electrically active interface states, respectively. The results of the electrical characterization were used to elucidate the intimate physical mechanisms that govern charge recombination at the Al 2O3/Si interface. Density of interface states (a) and lifetime (b) values are reported as a function of the PDA temperature for Al2O3 films of three different thickness values: 4, 6, and 8 nm. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GABRIELE SEGUINI (Unità di personale interno)
• MICHELE PEREGO (Unità di personale interno)
• ELENA CIANCI (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ELENA CIANCI (Persona)
• MICHELE PEREGO (Unità di personale interno)
• GABRIELE SEGUINI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica status solidi. A, Applications and materials science (Rivista)