Hot-electron conduction in ovonic materials (Articolo in rivista)

Type
Label
  • Hot-electron conduction in ovonic materials (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.sse.2013.02.007 (literal)
Alternative label
  • Jacoboni C. [ 1 ] ; Piccinini E. [ 2 ] ; Buscemi F. [ 2 ] ; Cappelli A. [ 1 ] (2013)
    Hot-electron conduction in ovonic materials
    in Solid-state electronics; PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Jacoboni C. [ 1 ] ; Piccinini E. [ 2 ] ; Buscemi F. [ 2 ] ; Cappelli A. [ 1 ] (literal)
Pagina inizio
  • 90 (literal)
Pagina fine
  • 95 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 84 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Modena & Reggio Emilia, CNR S3, Ist Nanosci, Dipartimento Sci Fis Informat & Matemat, I-41125 Modena, Italy [ 2 ] Univ Bologna, ARCES Res Ctr, I-40125 Bologna, Italy (literal)
Titolo
  • Hot-electron conduction in ovonic materials (literal)
Abstract
  • Electric conduction in ovonic materials is analyzed with special attention to chalcogenide glasses used for phase-change memories. A general theory is presented based on plausible microscopic assumptions. Electric field, carrier concentration, and electron temperature along the device, as well as diffusion and Poisson self-consistency, are considered. The effect of different ranges of localized levels in the gap is analyzed. The results account for and interpret all main experimental findings in phase-change memory cells. (literal)
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