K-band Diamond MESFETs for RFIC technology (Contributo in atti di convegno)

Type
Label
  • K-band Diamond MESFETs for RFIC technology (Contributo in atti di convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3) (2009)
    K-band Diamond MESFETs for RFIC technology
    in IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Boston, MA, JUN 07-09, 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3) (literal)
Pagina inizio
  • 319 (literal)
Pagina fine
  • 322 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • RFIC: 2009 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Univ Roma Tre, Elect Eng Dept, Rome, Italy 2. Ist. Fotonica Nanotecnologie, CNR, Rome, Italy 3. Univ Tor Vergata, Elect Eng Dept, Rome, Italy (literal)
Titolo
  • K-band Diamond MESFETs for RFIC technology (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-1-4244-3377-3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • IEEE (literal)
Abstract
  • Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P(out)=1.5 W/mm) and high frequency (and f(MAX)=35 GHz) performances have been obtained. (literal)
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