http://www.cnr.it/ontology/cnr/individuo/prodotto/ID260834

MESFETs on H-terminated polycrystalline diamond (Contributo in atti di convegno)

Type

Label

MESFETs on H-terminated polycrystalline diamond (Contributo in atti di convegno) (literal)

Anno

Alternative label

P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3) (2009)
MESFETs on H-terminated polycrystalline diamond
in 10th International Conference on Ultimate Integration on Silicon, Aachen, GERMANY, MAR 18-20, 2009
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

P. Calvani (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3) (literal)

Pagina inizio

Pagina fine

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ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON (literal)

Note

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1. Univ Roma Tre, Dept Elect Engn, Via Vasca Navale 8, I-00146 Rome, Italy 2. 3. (literal)

Titolo

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Abstract

Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise the replacement of vacuum electronics. Fabricated MESFETs typically showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f(t)=10 GHz and a maximum oscillation frequency, f(max), up to 35 GHz. These values suggest device microwave operation and are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies. (literal)

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