Contact Effects in Organic and Inorganic Thin Film Transistors (Contributo in atti di convegno)

Type
Label
  • Contact Effects in Organic and Inorganic Thin Film Transistors (Contributo in atti di convegno) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Alternative label
  • Fortunato, Guglielmo and Rapisarda, Matteo and Valletta, Antonio and Mariucci, Luigi (2013)
    Contact Effects in Organic and Inorganic Thin Film Transistors
    in Circuits and Thin Film Transistors, ULSI vs TFT 4, Grenoble, France, July 8-11, 2013
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fortunato, Guglielmo and Rapisarda, Matteo and Valletta, Antonio and Mariucci, Luigi (literal)
Pagina inizio
  • 171 (literal)
Pagina fine
  • 185 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 54 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR - IMM (literal)
Titolo
  • Contact Effects in Organic and Inorganic Thin Film Transistors (literal)
Abstract
  • Both organic and inorganic thin film transistors (TFTs) can be fabricated by forming Schottky barrier source/drain contacts. In particular in this work we analyzed the staggered configuration of Schottky barrier transistors and discussed three different cases, including organic, a-Si:H and InGaZnO TFTs. Device characteristics of these devices are seriously influenced by contact effects, with the parasitic voltage drops at the contacts reducing the effective voltages applied to the channel of the transistor. A simple method to extract the contact I-V characteristics is presented and, by using two-dimensional numerical simulations, the contact effects have been analyzed in great detail. (literal)
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