Diamond MESFET technology development for microwave integrated circuits (Contributo in atti di convegno)

Type
Label
  • Diamond MESFET technology development for microwave integrated circuits (Contributo in atti di convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • P. Calvani (1 ), A. Corsaro (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3) (2009)
    Diamond MESFET technology development for microwave integrated circuits
    in 4th European Microwave Integrated Circuits Conference, Rome, ITALY, SEP 28-29, 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P. Calvani (1 ), A. Corsaro (1), F. Sinisi (1), M.C. Rossi (1), G. Conte (1), E. Giovine (2), W. Ciccognani (3), E. Limiti (3) (literal)
Pagina inizio
  • 148 (literal)
Pagina fine
  • 151 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. University of Roma Tre, Electronic Eng. Dept., Rome, Italy, 2. Istituto di Fotonica e Nanotecnologie, CNR, Rome, Italy, 3. University of Rome \"Tor Vergata\", Electronic Eng. Dept. Rome, Italy (literal)
Titolo
  • Diamond MESFET technology development for microwave integrated circuits (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-1-4244-4749-7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • IEEE (literal)
Abstract
  • Submicron gate-length metal semiconductor field effect transistors (mesfets) were fabricated on hydrogen-terminated - large grain polycrystalline diamond. Devices showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f(t)=10 ghz and a maximum oscillation frequency, f(max), up to 35 ghz. These values suggest device microwave operation in the k-band. (literal)
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