http://www.cnr.it/ontology/cnr/individuo/prodotto/ID260646
Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy (Articolo in rivista)
- Type
- Label
- Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.4813625 (literal)
- Alternative label
Panda J. K. [ 1 ] ; Roy A. [ 1 ] ; Gemmi M. [ 2 ] ; Husanu E. [ 3,4 ] ; Li A. [ 3,4 ] ; Ercolani D. [ 3,4 ] ; Sorba L. [ 3,4 ] (2013)
Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy
in Applied physics letters; AMER INST PHYSICS, CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD., WOODBURY, NY (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Panda J. K. [ 1 ] ; Roy A. [ 1 ] ; Gemmi M. [ 2 ] ; Husanu E. [ 3,4 ] ; Li A. [ 3,4 ] ; Ercolani D. [ 3,4 ] ; Sorba L. [ 3,4 ] (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
[ 2 ] Ist Italiano Tecnol, Ctr Nanotechnol Innovat, NEST, I-56127 Pisa, Italy
[ 3 ] CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy
[ 4 ] Scuola Normale Super Pisa, I-56127 Pisa, Italy (literal)
- Titolo
- Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy (literal)
- Abstract
- Resonance Raman measurements are carried out on defect-free wurtzite GaP nanowires over the excitation energy range between 2.19 and 2.71 eV. Resonances of the E-1(LO) and A(1)(LO) modes demonstrate the existence of energy states with Gamma(9hh) and Gamma(7V) (Gamma(7C)) symmetries of the valence (conduction) band and enable us to measure wurtzite phase GaP band energies. In addition, we have performed temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of Gamma point energies. Our results provide the necessary feedback required for refining the available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure. (literal)
- Editore
- Prodotto di
- Autore CNR
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Editore di