Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy (Articolo in rivista)

Type
Label
  • Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4813625 (literal)
Alternative label
  • Panda J. K. [ 1 ] ; Roy A. [ 1 ] ; Gemmi M. [ 2 ] ; Husanu E. [ 3,4 ] ; Li A. [ 3,4 ] ; Ercolani D. [ 3,4 ] ; Sorba L. [ 3,4 ] (2013)
    Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy
    in Applied physics letters; AMER INST PHYSICS, CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD., WOODBURY, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Panda J. K. [ 1 ] ; Roy A. [ 1 ] ; Gemmi M. [ 2 ] ; Husanu E. [ 3,4 ] ; Li A. [ 3,4 ] ; Ercolani D. [ 3,4 ] ; Sorba L. [ 3,4 ] (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 103 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India [ 2 ] Ist Italiano Tecnol, Ctr Nanotechnol Innovat, NEST, I-56127 Pisa, Italy [ 3 ] CNR, Ist Nanosci, NEST, I-56127 Pisa, Italy [ 4 ] Scuola Normale Super Pisa, I-56127 Pisa, Italy (literal)
Titolo
  • Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy (literal)
Abstract
  • Resonance Raman measurements are carried out on defect-free wurtzite GaP nanowires over the excitation energy range between 2.19 and 2.71 eV. Resonances of the E-1(LO) and A(1)(LO) modes demonstrate the existence of energy states with Gamma(9hh) and Gamma(7V) (Gamma(7C)) symmetries of the valence (conduction) band and enable us to measure wurtzite phase GaP band energies. In addition, we have performed temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of Gamma point energies. Our results provide the necessary feedback required for refining the available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure. (literal)
Editore
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
data.CNR.it