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Origin of mechanical strain sensitivity of pentacene thin-film transistors (Articolo in rivista)

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Origin of mechanical strain sensitivity of pentacene thin-film transistors (Articolo in rivista) (literal)

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Scenev V. [ 1 ] ; Cosseddu P. [ 2,3 ] ; Bonfiglio A. [ 2,3 ] ; Salzmann I. [ 1 ] ; Severin N. [ 1 ] ; Oehzelt M. [ 4 ] ; Koch N. [ 1,4 ] ; Rabe J. P. [ 1 ] (2013)
Origin of mechanical strain sensitivity of pentacene thin-film transistors
in Organic electronics (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
(literal)

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Scenev V. [ 1 ] ; Cosseddu P. [ 2,3 ] ; Bonfiglio A. [ 2,3 ] ; Salzmann I. [ 1 ] ; Severin N. [ 1 ] ; Oehzelt M. [ 4 ] ; Koch N. [ 1,4 ] ; Rabe J. P. [ 1 ] (literal)

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[ 1 ] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany [ 2 ] Univ Cagliari, Dep Elect & Elect Engn, I-09123 Cagliari, Italy [ 3 ] CNR, Inst Nanosci, I-41100 Modena, Italy [ 4 ] Helmholtz Zentrum Berlin Mat & Energie BESSY II, D-12489 Berlin, Germany (literal)

Titolo

Origin of mechanical strain sensitivity of pentacene thin-film transistors (literal)

Abstract

We report on bending strain-induced changes of the charge carrier mobility in pentacene organic thin-film transistors employing a combined investigation of morphological, structural, and electrical properties. The observed drain current variations are reversible if the deformation is below 2%. The morphology and structure of the active pentacene layer is investigated by scanning force microscopy and specular synchrotron X-ray diffraction, which show that bending-stress causes morphological rather than structural changes, modifying essentially the lateral spacing between individual pentacene crystallites. In addition, for deformations >2% the rupture of source and drain gold electrodes is observed. In contrast to the metal electrodes, the modification of the organic layer remains reversible for deformations up to 10%, which suggests the use of soft and flexible electrodes such as graphene or conducting polymers to be beneficial for future strain sensing devices (literal)

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