Towards high frequency performances of ultra-low voltage OTFTs: Combining self-alignment and hybrid, nanosized dielectrics (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Towards high frequency performances of ultra-low voltage OTFTs: Combining self-alignment and hybrid, nanosized dielectrics (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.orgel.2012.11.032 (literal)

Alternative label

• Lai S. [ 1 ] ; Cosseddu P. [ 1,2 ] ; Gazzadi G. C. [ 2 ] ; Barbaro M. [ 1 ] ; Bonfiglio A. [ 1,2 ] (2013)
  Towards high frequency performances of ultra-low voltage OTFTs: Combining self-alignment and hybrid, nanosized dielectrics
  in Organic electronics (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lai S. [ 1 ] ; Cosseddu P. [ 1,2 ] ; Gazzadi G. C. [ 2 ] ; Barbaro M. [ 1 ] ; Bonfiglio A. [ 1,2 ] (literal)

Pagina inizio

• 754 (literal)

Pagina fine

• 761 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 14 (literal)

Rivista

• Organic electronics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy [ 2 ] CNR Inst Nanosci, I-41125 Modena, Italy (literal)

Titolo

• Towards high frequency performances of ultra-low voltage OTFTs: Combining self-alignment and hybrid, nanosized dielectrics (literal)

Abstract

• By combining an ultra-thin dielectric layer with a self-aligning process, an ultra-low voltage Organic Thin-Film Transistor (OTFT) with a 100 kHz cutoff frequency was obtained. The devices are fabricated using a single-mask, photolithographic self-alignment technique compatible with the use of standard photoresists and not requiring any further chemical treatment. This technique allows a dramatic reduction of the parasitic capacitances thus leading to a remarkable increase of the cutoff frequency, even with organic semiconductors with a relatively low mobility. These characteristics make the reported approach suitable for the fabrication of basic building blocks for high frequency applications. In this paper, the main electrical parameters of ultra-low voltage, self-aligned devices are reported, and their complete frequency characterization is provided. (literal)

Prodotto di

• Nanobiosistemi (MD.P06.010.002) (Modulo)
• Nanofabbricazione e fenomeni di superficie interfaccia alla nanoscala (MD.P06.013.002) (Modulo)

Autore CNR

• PIERO COSSEDDU (Unità di personale esterno)
• ANNALISA BONFIGLIO (Unità di personale esterno)
• GIANCARLO GAZZADI (Persona)

Incoming links:

Autore CNR di

• GIANCARLO GAZZADI (Persona)
• ANNALISA BONFIGLIO (Unità di personale esterno)
• PIERO COSSEDDU (Unità di personale esterno)

Prodotto

• Nanobiosistemi (MD.P06.010.002) (Modulo)
• Nanofabbricazione e fenomeni di superficie interfaccia alla nanoscala (MD.P06.013.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Organic electronics (Rivista)