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Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon (Articolo in rivista)
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- Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Alternative label
Seguini, G.a and Castro, C.b and Schamm-Chardon, S.b and Benassayag, G.b and Pellegrino, P.c and Perego, M.a (2013)
Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon
in Applied physics letters (Online)
(literal)
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- Seguini, G.a and Castro, C.b and Schamm-Chardon, S.b and Benassayag, G.b and Pellegrino, P.c and Perego, M.a (literal)
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- Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy; CEMES-CNRS, Université de Toulouse, NMat Group, BP94345, 31055 Toulouse, Cedex 4, France; MIND, IN2UB, Universitat de Barcelona, c/ Martì i Franquès 1, E-08028 Barcelona, Catalunya, Spain (literal)
- Titolo
- Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon (literal)
- Abstract
- Si nanocrystals (NCs) embedded in a SiO2 matrix provide an exemplar curved nanostructured interface to evidence the competition between surface states and quantum confinement (QC) effects. The study of the energy band alignment as a function of NCs size (<5 nm) clarifies their interplay and identifies, with subnanometric resolution, three different regimes. Primarily QC affects the conduction band, then surface effects pin the conduction states, and finally QC starts to modify the valence band. A way to study how different nanoscale configurations compete with pure quantum properties is established. © 2013 AIP Publishing LLC. (literal)
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