http://www.cnr.it/ontology/cnr/individuo/prodotto/ID257821
Dopant profile investigation in low-energy scanning transmission electron microscopy (Articolo in rivista)
- Type
- Label
- Dopant profile investigation in low-energy scanning transmission electron microscopy (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Alternative label
F. Corticelli, P.G. Merli, A. Migliori, V. Morandi, S. Tundo (2003)
Dopant profile investigation in low-energy scanning transmission electron microscopy
in Institute of physics conference series; IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Corticelli, P.G. Merli, A. Migliori, V. Morandi, S. Tundo (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMM Sezione di Bologna, Via P.Gobetti 101, 40129 Bologna, Italy
CNR-IMM Sezione di Lecce, Via per Arnesano, 73100, Italy (literal)
- Titolo
- Dopant profile investigation in low-energy scanning transmission electron microscopy (literal)
- Abstract
- Scanning Electron Microscopy has been used in a transmission mode. The image is formed with the secondary electrons, collected by the standard detector, resulting from the conversion of transmitted electrons. Operating in bright field and dark field imaging mode, at 20 and 30 keV, As dopant profile in Si, having a peak concentrations of 5%, and a spatial extension of about 40 nm and 20 nm, have been observed in cross sectioned specimens. (literal)
- Editore
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- Autore CNR
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