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Heterodyne and subharmonic mixing at 0.6THz in an AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor (Articolo in rivista)

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Heterodyne and subharmonic mixing at 0.6THz in an AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor (Articolo in rivista) (literal)

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Alternative label

V. Giliberti (1,2), A. Di Gaspare (1), E. Giovine (1), S. Boppel (3), A. Lisauskas (3), H.G. Roskos (3), M. Ortolani (1,2) (2013)
Heterodyne and subharmonic mixing at 0.6THz in an AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor
in Applied physics letters; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
(literal)

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V. Giliberti (1,2), A. Di Gaspare (1), E. Giovine (1), S. Boppel (3), A. Lisauskas (3), H.G. Roskos (3), M. Ortolani (1,2) (literal)

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1 CNR-Istituto di Fotonica e Nanotecnologie, Via Cineto Romano 42, 00156 Rome, Italy 2 Dipartimento di Fisica, Sapienza Universit?a di Roma, Piazzale Aldo Moro 5, 00185 Rome, Italy 3 Physikalisches Institut, Goethe-Universitat, D-60438 Frankfurt am Main, Germany (literal)

Titolo

Heterodyne and subharmonic mixing at 0.6THz in an AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor (literal)

Abstract

We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz antenna connected to the channel terminals and a gate length of 1 lm. We investigated frequency mixing in the transistor's channel by measuring, with a quasi-optical setup, the heterodyne, secondand third-order subharmonic mixing signal at 0.592 THz. The dependence on the gate voltage and on the radiation power of both the local-oscillator and the radio-frequency signals was studied for all mixing orders. The conditions for full-plasmonic-mixing are fulfilled in our transistor at room temperature. (literal)

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