Nanowire-based field effect transistors for terahertz detection and imaging systems (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Nanowire-based field effect transistors for terahertz detection and imaging systems (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/24/21/214005 (literal)

Alternative label

• Romeo, L ; Coquillat, D; Pea, M ; Ercolani, D; Beltram, F ; Sorba, L ; Knap, W; Tredicucci, A ; Vitiello, MS (2013)
  Nanowire-based field effect transistors for terahertz detection and imaging systems
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Romeo, L ; Coquillat, D; Pea, M ; Ercolani, D; Beltram, F ; Sorba, L ; Knap, W; Tredicucci, A ; Vitiello, MS (literal)

Pagina inizio

• 214005 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 24 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 21 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Scuola Normale Super Pisa, NEST, I-56127 Pisa, Italy CNR, Ist Nanosci, I-56127 Pisa, Italy Univ Montpellier 2, CNRS, UMR 5221, Lab Charles Coulomb, F-34095 Montpellier, France (literal)

Titolo

• Nanowire-based field effect transistors for terahertz detection and imaging systems (literal)

Abstract

• The development of self-assembled nanostructure technologies has recently opened the way towards a wide class of semiconductor integrated devices, with progressively optimized performances and the potential for a widespread range of electronic and photonic applications. Here we report on the development of field effect transistors (FETs) based on semiconductor nanowires (NWs) as highly-sensitive room-temperature plasma-wave broadband terahertz (THz) detectors. The electromagnetic radiation at 0.3 THz is funneled onto a broadband bow-tie antenna, whose lobes are connected to the source and gate FET electrodes. The oscillating electric field experienced by the channel electrons, combined with the charge density modulation by the gate electrode, results in a source-drain signal rectification, which can be read as a DC signal output. We investigated the influence of Se-doping concentration of InAs NWs on the detection performances, reaching responsivity values higher than 100 V W-1, with noise-equivalent-power of similar to 10(-9) W Hz(-1/2). Transmission imaging experiments at 0.3 THz show the good reliability and sensitivity of the devices in a real practical application. (literal)

Autore CNR

• MIRIAM SERENA VITIELLO (Unità di personale interno)
• DANIELE ERCOLANI (Unità di personale esterno)
• LORENZO ROMEO (Persona)
• FABIO BELTRAM (Persona)
• LUCIA SORBA (Unità di personale interno)
• MARIALILIA PEA (Persona)
• ALESSANDRO TREDICUCCI (Unità di personale interno)

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Autore CNR di

• MIRIAM SERENA VITIELLO (Unità di personale interno)
• LUCIA SORBA (Unità di personale interno)
• ALESSANDRO TREDICUCCI (Unità di personale interno)
• LORENZO ROMEO (Persona)
• DANIELE ERCOLANI (Unità di personale esterno)
• FABIO BELTRAM (Persona)
• MARIALILIA PEA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)

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