http://www.cnr.it/ontology/cnr/individuo/prodotto/ID25613
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors (Articolo in rivista)
- Type
- Label
- Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mee.2010.11.046 (literal)
- Alternative label
A. Notargiacomo (1), R. Bagni (2), E. Giovine (1), V. Foglietti (1), S. Carta (1), M. Pea (2), L. Di Gaspare (2), G. Capellini (2), F. Evangelisti (2) (2011)
Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors
in Microelectronic engineering; ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- A. Notargiacomo (1), R. Bagni (2), E. Giovine (1), V. Foglietti (1), S. Carta (1), M. Pea (2), L. Di Gaspare (2), G. Capellini (2), F. Evangelisti (2) (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1. CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy
2. Univ Roma TRE, Phys Dept E Amaldi, I-00146 Rome, Italy (literal)
- Titolo
- Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors (literal)
- Abstract
- We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF6 was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates. (literal)
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