http://www.cnr.it/ontology/cnr/individuo/prodotto/ID25608

RF power performance evaluation of surface channel diamond MESFETs (Articolo in rivista)

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RF power performance evaluation of surface channel diamond MESFETs (Articolo in rivista) (literal)

Anno

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Alternative label

V. Camarchia (1,2), F. Cappelluti (b), G. Ghione (2), M.C. Rossi (3), P. Calvani (3), G. Conte (3), B. Pasciuto (4), E. Limiti (4), D. Dominijanni (5), E. Giovine (5) (2011)
RF power performance evaluation of surface channel diamond MESFETs
in Solid-state electronics; PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD (Regno Unito)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

V. Camarchia (1,2), F. Cappelluti (b), G. Ghione (2), M.C. Rossi (3), P. Calvani (3), G. Conte (3), B. Pasciuto (4), E. Limiti (4), D. Dominijanni (5), E. Giovine (5) (literal)

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1. Politecn Torino, Dept Elect, I-10129 Turin, Italy 2. Ctr Space Human Robot, Italian Inst Technol, I-10129 Turin, Italy 3. Univ Roma Tre, Dept Elect Engn, Rome, Italy 4. Univ Roma Tor Vergata, Dept Elect Engn, I-00195 Rome, Italy 5. IFN CNR, Rome, Italy (literal)

Titolo

Abstract

We experimentally investigate the large-signal radio frequency performances of surface-channel p-type diamond MESFETs fabricated on hydrogenated polycrystalline diamond. The devices under examination have a coplanar layout with two gate fingers, total gate periphery of 100 mu m; in DC they exhibit a hole accumulation behavior with threshold voltage V(t)approximate to 0-0.5 V and maximum drain current density of 120 mA/mm. The best small-signal radio frequency performances (maximum cutoff or transition frequency f(T) and oscillation frequency f(max)) were obtained close to the threshold and were of the order of 6 and 15 GHz, respectively. The power radio frequency response was characterized by driving the devices in class A at an operating frequency of 2 GHz and identifying through the active load-pull technique the optimum load for maximum power added efficiency. A power gain in linearity of 8 dB and an output power of approximately 0.2 W/mm with 22% power added efficiency were obtained on the optimum load impedance at a bias point V(DS) = -14 V, V(GS) = -1 V. To the best of our knowledge, these are the first large signal measurements ever reported for surface MESFET on polycrystalline diamond, and show the potential of such technology for the development of microwave power devices. (literal)

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