Quantum transport in low-dimensional AlGaN/GaN systems (Articolo in rivista)

Type
Label
  • Quantum transport in low-dimensional AlGaN/GaN systems (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s11051-010-0136-7 (literal)
Alternative label
  • Spirito, D [1]; Frucci, G [1]; Di Gaspare, A [2]; Di Gaspare, L [1]; Giovine, E [2]; Notargiacomo, A [2] ; Roddaro, S [3,4]; Beltram, F [3,4]; Evangelisti, F [1] (2011)
    Quantum transport in low-dimensional AlGaN/GaN systems
    in Journal of nanoparticle research
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Spirito, D [1]; Frucci, G [1]; Di Gaspare, A [2]; Di Gaspare, L [1]; Giovine, E [2]; Notargiacomo, A [2] ; Roddaro, S [3,4]; Beltram, F [3,4]; Evangelisti, F [1] (literal)
Pagina inizio
  • 5699 (literal)
Pagina fine
  • 5704 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 13 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [1] Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy [2] IFN CNR, Ist Foton & Nanotecnol, I-00156 Rome, Italy [3] Ist Nanosci CNR, NEST, I-56127 Pisa, Italy [4] Scuola Normale Super Pisa, I-56127 Pisa, Italy (literal)
Titolo
  • Quantum transport in low-dimensional AlGaN/GaN systems (literal)
Abstract
  • In this work, we investigated the magnetotransport properties of a two dimensional electron gas hosted in an AlGaN/AlN/GaN heterostructure and one-dimensional devices fabricated on it. At cryogenic temperature, high mobility and long mean free path is achieved, allowing ballistic transport experiments. Longitudinal resistivity measured in Hall bar geometry shows well-developed Shubnikov-de Haas oscillations with amplitude modulation. Amongst possible mechanisms, the zero-field spin splitting may be the origin of the observed effects. Split gate quantum point contacts were fabricated by electron beam lithography. Linear conductance measurements at zero magnetic field show clear quantized conductance plateaus at 2e (2)/h and 4e (2)/h. Non-perfectly quantized conductance values are found for higher plateaus, suggesting the presence of impurity scattering. (literal)
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