http://www.cnr.it/ontology/cnr/individuo/prodotto/ID255986

Transition metal binary oxides for ReRAM applications (Contributo in atti di convegno)

Type

Prodotto della ricerca (Classe)
Contributo in atti di convegno (Classe)

Label

Transition metal binary oxides for ReRAM applications (Contributo in atti di convegno) (literal)

Anno

2009-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1149/1.3206640 (literal)

Alternative label

S. Spiga (a), A. Lamperti (a), E. Cianci (a), F.G. Volpe (a), M. Fanciulli (a,b) (2009)
Transition metal binary oxides for ReRAM applications
in 216th Meeting of the Electrochemical Society, Vienna-Austria, 5 October 2009 through 7 October 2009
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

S. Spiga (a), A. Lamperti (a), E. Cianci (a), F.G. Volpe (a), M. Fanciulli (a,b) (literal)

Pagina inizio

411 (literal)

Pagina fine

425 (literal)

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ISSN: 19385862 (literal)

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http://ecst.ecsdl.org/content/25/6/411.short (literal)

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Physics and Technology of High-k Gate Dielectrics 7 (literal)

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25 (literal)

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15 (literal)

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6 (literal)

Note

Scopu (literal)

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a) Laboratorio Nazionale MDM, CNR-INFM, 20041, Agrate Brianza (MI), Italy b) Dipartimento di Scienza dei Materiali, Università degli Studi Milano-Bicocca, 20125, Milano, Italy (literal)

Titolo

Transition metal binary oxides for ReRAM applications (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

978-1-56677-743-8 (literal)

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S. Kar, M. Houssa, S. Van Elshocht, D. Landheer (literal)

Abstract

Resistive switching characteristics of polycrystalline nickel oxide were studied for non volatile memory applications. NiO was deposited by atomic layer deposition and electron beam evaporation on silicon and various metal bottom electrodes. After an initial electroforming step, NiO based devices with Pt top electrode and Si, Pt, Ni, TiN or W bottom electrodes exihibit reproducible unipolar switching. The film physical properties as well as electrode combinations influence the programming voltages and resistance window. While Pt and Si electrodes give a reduced dispersion of programming voltages and currents, the largest resistance window (up to four order of magnitude) is obtained when W is used. Preliminary data on the switching properties of amorphous Nb2O5 and polycrystalline ZrO2 films are also discussed. (literal)
Resistive switching characteristics of polycrystalline nickel oxide were studied for non volatile memory applications. NiO was deposited by atomic layer deposition and electron beam evaporation on silicon and various metal bottom electrodes. After an initial electroforming step, NiO based devices with Pt top electrode and Si, Pt, Ni, TiN or W bottom electrodes exihibit reproducible unipolar switching. The film physical properties as well as electrode combinations influence the programming voltages and resistance window. While Pt and Si electrodes give a reduced dispersion of programming voltages and currents, the largest resistance window (up to four orders of magnitude) is obtained when W is used. Preliminary data on the switching properties of amorphous Nb2O5 and polycrystalline ZrO2 films are also discussed. (literal)

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