Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman scpectroscopy (Articolo in rivista)

Type
Label
  • Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman scpectroscopy (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/nn305112a (literal)
Alternative label
  • Funk S. [ 1,2,3 ] ; Li A. [ 4,5 ] ; Ercolani D.[ 4,5 ] ; Gemmi M. [ 6 ] ; Sorba L. [ 4,5 ] ; Zardo I. [ 1,2,3 ] (2013)
    Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman scpectroscopy
    in ACS nano; AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Funk S. [ 1,2,3 ] ; Li A. [ 4,5 ] ; Ercolani D.[ 4,5 ] ; Gemmi M. [ 6 ] ; Sorba L. [ 4,5 ] ; Zardo I. [ 1,2,3 ] (literal)
Pagina inizio
  • 1400 (literal)
Pagina fine
  • 1407 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 7 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany [ 2 ] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany [ 3 ] Tech Univ Munich, Inst Adv Study, D-85748 Garching, Germany [ 4 ] Ist Nanosci CNR, NEST, I-56127 Pisa, Italy [ 5 ] Scuola Normale Super Pisa, I-56127 Pisa, Italy [ 6 ] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy (literal)
Titolo
  • Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman scpectroscopy (literal)
Abstract
  • We report on a major modification of the fundamental electronic band structure of AlAs when grown as a nanoscaled wurtzite crystal. Resonant Raman spectra of individual AlAs GaAs core shell nanowires display a resonance between 1.83 and 2.18 eV for the AIAs E-1(TO) phonon mode. Our findings substantiate the lowest conduction band of wuruite AIAs to comprise Gamma(8) symmetry and a low effective mass in agreement with calculations reported recently. The electronic resonance falls below the X, Land Gamma valleys known for AlAs in the zincblende phase. This result points toward a direct nature of wurtzite AIM and is expected to apply more generally to semiconductors that in the bulk phase exhibit L valleys at lower energies than the conduction band at the Gamma point. (literal)
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