http://www.cnr.it/ontology/cnr/individuo/prodotto/ID255462
High-quality, Cr-doped InGaAs/InP(001) MQWs grown by tert-butylarsine in a MOVPE apparatus (Articolo in rivista)
- Type
- Label
- High-quality, Cr-doped InGaAs/InP(001) MQWs grown by tert-butylarsine in a MOVPE apparatus (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0022-0248(02)01851-1 (literal)
- Alternative label
Carta, G. and D'Andrea, A. and Fernández-Alonso, F. and Franco, A. and El Habra, N. and Righini, M. and Rossetto, G. and Schiumarini, D. and Selci, S. and Zanella, P. (2003)
High-quality, Cr-doped InGaAs/InP(001) MQWs grown by tert-butylarsine in a MOVPE apparatus
in Journal of crystal growth
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Carta, G. and D'Andrea, A. and Fernández-Alonso, F. and Franco, A. and El Habra, N. and Righini, M. and Rossetto, G. and Schiumarini, D. and Selci, S. and Zanella, P. (literal)
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- http://www.sciencedirect.com/science/article/pii/S0022024802018511 (literal)
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- Rivista
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- Note
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- CNR-Istituto di Chimica Inorganica e delle Superfici
CNR-Istituto di Metodologie Inorganiche e dei Plasmi
CNR-Istituto di Struttura della Materia
CNR- Istituto dei Sistemi Complessi (literal)
- Titolo
- High-quality, Cr-doped InGaAs/InP(001) MQWs grown by tert-butylarsine in a MOVPE apparatus (literal)
- Abstract
- We have studied the introduction of deep levels in InGaAs/InP multi-quantum wells (MQW) grown by metalorganic vapor phase epitaxy using tert-butylarsine (tBuAsH2) as arsenic precursor as well as chromium (bis-cyclopentadienyl chromium) and zinc (diethyl-zinc) as dopant elements able to promote recombination centres in the ternary alloy. We have utilized secondary-ion mass spectrometry to measure dopant concentrations and high-resolution X-ray diffraction for structural characterization. Particularly for the chromium-doped systems, frequency- and time-resolved optical spectroscopy of the MWQ ground-state transition confirms an increase of the carrier recombination rate upon an increase of defect density, while the electronic and structural properties of the sample are largely preserved. (literal)
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