Structural properties of Si nanocrystals: implications for light emitting devices fabrication (Contributo in atti di convegno)

Type
Label
  • Structural properties of Si nanocrystals: implications for light emitting devices fabrication (Contributo in atti di convegno) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/GROUP4.2008.4638089 (literal)
Alternative label
  • A. Irrera 1, G. Franzò 1, M. Miritello 1, R. Lo Savio 1, S. Boninelli 1, F. Priolo 1, F. Iacona 2, G, Nicotra 2, C. Bongiorno 2, C. Spinella 2, S. Coffa 3 (2008)
    Structural properties of Si nanocrystals: implications for light emitting devices fabrication
    in Group IV Photonics, 2008 5th IEEE International Conference on, Sorrento (Italy), 17-19 Sept. 2008
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Irrera 1, G. Franzò 1, M. Miritello 1, R. Lo Savio 1, S. Boninelli 1, F. Priolo 1, F. Iacona 2, G, Nicotra 2, C. Bongiorno 2, C. Spinella 2, S. Coffa 3 (literal)
Pagina inizio
  • 38 (literal)
Pagina fine
  • 40 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR-INFM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy 2. CNR-IMM, Stradale Primosole 50, 95121 Catania, Italy 3. STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy (literal)
Titolo
  • Structural properties of Si nanocrystals: implications for light emitting devices fabrication (literal)
Abstract
  • In this work we investigate and compare the structural and optical properties of silicon-rich silicon oxide layers obtained by different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD) and RF magnetron sputtering. We demonstrate that, in contrast to what generally believed, properties of films grown by different methods are indeed very different as a result of the agglomeration properties. These data have also great implications on the performances of light emitting MOS devices whose active layer has been prepared by the two different techniques. (literal)
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