New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuit (Contributo in atti di convegno)

Type
Label
  • New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuit (Contributo in atti di convegno) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1051/jp420020051 (literal)
Alternative label
  • Villegier, JC; Hadacek, N; Jorel, C; Thomassin, JL; Bouchiat, V; Faucher, M; Febvre, P; Rousy, A; Lamura, G (2002)
    New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuit
    in 5th European Workshop on Low Temperature Electronics (WOLTE 5), GRENOBLE, FRANCE, JUN 19-21, 2002
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Villegier, JC; Hadacek, N; Jorel, C; Thomassin, JL; Bouchiat, V; Faucher, M; Febvre, P; Rousy, A; Lamura, G (literal)
Pagina inizio
  • 129 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 12 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CEA Grenoble, SPSMS, LCP, F-38054 Grenoble 9, France CNRS, CRTBT, F-38042 Grenoble, France Univ Savoie, LAHC, F-73376 La Bourget du Lac, France Ecole Super Phys & Chim Ind Ville Paris, LPS, F-75231 Paris, France (literal)
Titolo
  • New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuit (literal)
Abstract
  • Nitride superconductors and specially niobium nitride are key materials for developing high performance optoelectronic and digital circuits. We are presenting a way to achieve such high frequency devices on R-plane sapphire or MgO substrates, Deposition of thin and flat NbN films with Tc above 10 K, low and reproducible penetration depth (lambda(L)similar to250 nm) and surface resistance (Rs) values up to 1 THz, is required and obtained by sputtering on a substrate heated in the 300-600degreesC range. Simple sub-micrometer size HEB bridge structures where patterned even in a very thin (2-5 nm thick) NbN layers offering relaxation times below 30 ps. It is then possible to achieve fast optoelectronic data links and sensors on-chip with high clock frequency NbN RSFQ digital circuits (literal)
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