Supersonic molecular beams deposition of alpha-quaterthiophene: Enhanced growth control and devices performances (Articolo in rivista)

Type
Label
  • Supersonic molecular beams deposition of alpha-quaterthiophene: Enhanced growth control and devices performances (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.orgel.2008.12.017 (literal)
Alternative label
  • T. Toccoli (1); M. Tonezzer (1)(4); P. Bettotti (3); N. Coppedè (1); S. Larcheri (3); A. Pallaoro (1); L. Pavesi (3); S. Iannotta (1)(2) (2009)
    Supersonic molecular beams deposition of alpha-quaterthiophene: Enhanced growth control and devices performances
    in Organic electronics (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • T. Toccoli (1); M. Tonezzer (1)(4); P. Bettotti (3); N. Coppedè (1); S. Larcheri (3); A. Pallaoro (1); L. Pavesi (3); S. Iannotta (1)(2) (literal)
Pagina inizio
  • 521 (literal)
Pagina fine
  • 526 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S1566119909000020 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 10 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) Inst Photon & Nanotechnol, IFN CNR Trento Div, I-38100 Povo, Italy (2) Ist Mat Elettron & Magnetismo, IMEM CNR, I-43100 Parma, Italy (3) Univ Trent, Dipartimento Fis, Lab Nanosci, I-38050 Povo, Italy (4) TASC INFM CNR Natl Lab SS, I-34012 Basovizza, Italy (literal)
Titolo
  • Supersonic molecular beams deposition of alpha-quaterthiophene: Enhanced growth control and devices performances (literal)
Abstract
  • The alpha-quatertiophene is widely considered an interesting material for the realization of organic electronics and opto-electronics. Compared to other oligothiophenes, the performances of transistors based on this compound are limited by its kind of growth on the typical materials used for device realization. Here we show that via seeded supersonic beams we can lead to a nice improvement of both morphological and electrical properties of the film grown, through a better control of the initial state of the precursor in the vapor phase. Using the high kinetic energy achievable in the supersonic beams, we increase the dimensions of the grains and the coalescence of different islands, limiting the grain boundary formation. As consequence, the performance of the realized field effect transistors is enhanced of one order of magnitude. (literal)
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